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savantic semiconductor product specification silicon npn power transistors 2SC2830 d escription with to-3 package high voltage ,high speed wide area of safe operation applications for switching regulator applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 20 a p t total power dissipation t mb =25 200 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-mb thermal resistance from junction to mounting base 1.0 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2830 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0 400 v v cesat collector-emitter saturation voltage i c =12a; i b =2.4a 1.2 v v besat base-emitter saturation voltage i c =12a; i b =2.4a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 0.1 ma i ceo collector cut-off current v ce =400v; i b =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe-1 dc current gain i c =2.4a ; v ce =5v 15 50 h fe-2 dc current gain i c =12a ; v ce =5v 10
savantic semiconductor product specification 3 silicon npn power transistors 2SC2830 package outline fig.2 outline dimensions

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